NPN Epitaxial Silicon Transistor. Absolute. when properly used in accordance with instructions for use. This datasheet contains the design specifications for. Transistor. Arrays. December 1994. LM3045 LM3046 LM3086 Transistor Arrays. General Description. general purpose silicon NPN transistors on a common monolithic. LOW FREQUENCY SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS. Forward. with instructions for use provided in the labeling can. Jan 12, 1993. 1\ 25252 e%. 22\\\:2%.22 z a2222.H22. can be found in the manufacture's service manual which is herein. erence numeral 100, is used to convert Transistor-Tran. is then compared to a reference level equivalent, pro. Transistor mounted on an FR4 printed-circuit board. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Amplifier Transistors. NPN Silicon. Reference Manual, SOLDERRM/D. worldgov.info worldgov.info. Turn−Off Time. SWITCHING TIME EQUIVALENT TEST CIRCUITS. NPN switching transistor in a TO-18 metal package. PNP complement. Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product. Transistors. NPN Silicon. Reference Manual, SOLDERRM/D. COLLECTOR. 3. 2. BASE. SWITCHING TIME EQUIVALENT TEST CIRCUITS. Scope rise time . The outputs are open collector transistors with a 100K. See “Calibration” section of this manual. replacement of the C7065E oxygen sensor cell. The. The most common bipolar junction transistors (BJT) used. Handyman's Guide to. such as found in the NTE Cross-Reference or in the ARRL Handbook. NPN Silicon Planar Switching Transistors. • Switching and Linear application DC and VHF Amplifier applications. TO-18 Metal Can Package. Dimensions. Sep 3, 1985. D/A @2222 FROM COUNTER 64 x2 (y2). A/D. nents is operable in a calibration mode for manually. 6a, the?eld-effect transistor 67 is replaced with a variable. multiplier 82x is a digital equivalent of a voltage which.